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1F7
Discrete Semiconductor Products

1F7

Active
SMC Diode Solutions

DIODE GEN PURP 1KV 1A R-1

1F7
Discrete Semiconductor Products

1F7

Active
SMC Diode Solutions

DIODE GEN PURP 1KV 1A R-1

Technical Specifications

Parameters and characteristics for this part

Specification1F7
Capacitance15 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)150 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseR-1, Axial
Package NameR-1
Reverse Recovery Time (trr)500 ns
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)1 kV
Voltage - Forward (Vf) (Max)1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Box (TB) 50000$ 0.03<4d

CAD

3D models and CAD resources for this part

Description

General part information

- Series

Diode 1000 V 1A Through Hole R-1

Documents

Technical documentation and resources