Specification	MMBT6429LT1

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	500
Frequency - Transition	700 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	225 mW
Supplier Device Package	SOT-23-3 (TO-236)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

NSVMMBT6429 Series

NPN Bipolar Transistor

Part	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
ON Semiconductor MMBT6429LT1G	100 nA	45 V	225 mW	NPN	SOT-23-3 (TO-236)	200 mA	SC-59 SOT-23-3 TO-236-3	600 mV	500	700 MHz	-55 °C	150 °C	Surface Mount
ON Semiconductor NSVMMBT6429LT1G	100 nA	45 V		NPN	SOT-23-3 (TO-236)	200 mA	SC-59 SOT-23-3 TO-236-3	600 mV	500	700 MHz	-55 °C	150 °C	Surface Mount
ON Semiconductor MMBT6429LT1	100 nA	45 V	225 mW	NPN	SOT-23-3 (TO-236)	200 mA	SC-59 SOT-23-3 TO-236-3	600 mV	500	700 MHz	-55 °C	150 °C	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NSVMMBT6429 Series

This NPN Bipolar transistor is designed for high gain, low noise general purpose amplifier applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

Documents

Technical documentation and resources

Package Drawing-318-SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

Package Drawing