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ONSEMI MMBZ18VALT1G.
Discrete Semiconductor Products

MMBT6429LT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 45 V, 200 MA, 225 MW, SOT-23, SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsDatasheetPackage Drawing-318-SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P+2
ONSEMI MMBZ18VALT1G.
Discrete Semiconductor Products

MMBT6429LT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 45 V, 200 MA, 225 MW, SOT-23, SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheetPackage Drawing-318-SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P+2

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBT6429LT1G
Current - Collector (Ic) (Max) [Max]200 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]500
Frequency - Transition700 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]225 mW
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.16
10$ 0.10
100$ 0.06
500$ 0.04
1000$ 0.04
Digi-Reel® 1$ 0.16
10$ 0.10
100$ 0.06
500$ 0.04
1000$ 0.04
Tape & Reel (TR) 3000$ 0.03
6000$ 0.03
9000$ 0.03
15000$ 0.02
21000$ 0.02
30000$ 0.02
75000$ 0.02
150000$ 0.02
300000$ 0.02
NewarkEach (Supplied on Full Reel) 18000$ 0.02
30000$ 0.02
ON SemiconductorN/A 1$ 0.02

Description

General part information

NSVMMBT6429 Series

This NPN Bipolar transistor is designed for high gain, low noise general purpose amplifier applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.