Discrete Semiconductor Products

EGP20K

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FAST / ULTRAFAST DIODE, 800 V, 2 A, SINGLE, 1.7 V, 75 NS, 75 A

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Discrete Semiconductor Products

Active

FAST / ULTRAFAST DIODE, 800 V, 2 A, SINGLE, 1.7 V, 75 NS, 75 A

Technical Specifications

Parameters and characteristics for this part

Specification	EGP20K

Capacitance @ Vr, F	45 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AC, DO-15, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-15
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

2.0A Ultra Fast Recovery Rectifier

Part	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type	Technology	Capacitance @ Vr, F	Speed	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - Forward (Vf) (Max) @ If [Max]
ON Semiconductor EGP20D	50 ns	200 V	2 A	Through Hole	Standard	70 pF	200 mA 500 ns	Axial DO-15 DO-204AC	5 µA	150 °C	-65 C	DO-15	950 mV
ON Semiconductor EGP20K	75 ns	800 V	2 A	Through Hole	Standard	45 pF	200 mA 500 ns	Axial DO-15 DO-204AC	5 µA	150 °C	-65 C	DO-15		1.7 V
ON Semiconductor EGP20A	50 ns	50 V	2 A	Through Hole	Standard	70 pF	200 mA 500 ns	Axial DO-15 DO-204AC	5 µA	150 °C	-65 C	DO-15	950 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

2.0A Ultra Fast Recovery Rectifier

Technical documentation and resources