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TO-220-3 Full Pack
Discrete Semiconductor Products

TK8A60DA(STA4,Q,M)

Obsolete
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 7.5A TO220SIS

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TO-220-3 Full Pack
Discrete Semiconductor Products

TK8A60DA(STA4,Q,M)

Obsolete
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 7.5A TO220SIS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTK8A60DA(STA4,Q,M)
Current - Continuous Drain (Id) @ 25°C7.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]20 nC
Input Capacitance (Ciss) (Max) @ Vds1050 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)45 W
Rds On (Max) @ Id, Vgs1 Ohm
Supplier Device PackageTO-220SIS
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

TK8A60 Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.5 Ω@10V, TO-220SIS, DTMOSⅣ

Documents

Technical documentation and resources

No documents available