High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.5 Ω@10V, TO-220SIS, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.5 Ω@10V, TO-220SIS, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.5 Ω@10V, TO-220SIS, DTMOSⅣ
| Part | FET Type | Package / Case | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Technology | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | N-Channel | TO-220-3 Full Pack | 30 V | Through Hole | 600 V | 500 mOhm | 3.7 V | 150 °C | 10 V | 570 pF | 18.5 nC | TO-220SIS | 8 A | MOSFET (Metal Oxide) | |
 Toshiba Semiconductor and Storage | N-Channel | TO-220-3 Full Pack | 30 V | Through Hole | 600 V | 1 Ohm | 150 °C | 10 V | 1050 pF | 20 nC | TO-220SIS | 7.5 A | MOSFET (Metal Oxide) | 45 W | |
Toshiba Semiconductor and Storage | N-Channel | TO-220-3 Full Pack | 30 V | Through Hole | 600 V | 540 mOhm | 4.5 V | 150 °C | 10 V | 590 pF | 22 nC | TO-220SIS | 8 A | MOSFET (Metal Oxide) |