Specification	ONET8541TYS4

-3db Bandwidth	9 GHz
Amplifier Type	Transimpedance
Current - Supply	27 mA
Mounting Type	Surface Mount
Number of Circuits	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Output Type	Differential
Package / Case	Die
Supplier Device Package	Wafer
Voltage - Supply Span (Max) [Max]	3.63 V
Voltage - Supply Span (Min) [Min]	2.97 V

ONET8541T Series

9-GHz, 4-kΩ transimpedance amplifier with RSSI

Part	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply Span (Min) [Min]	Voltage - Supply Span (Max) [Max]	Mounting Type	Current - Supply	Output Type	Supplier Device Package	Amplifier Type	Number of Circuits	-3db Bandwidth	Package / Case
Texas Instruments ONET8541TYS4	100 °C	-40 °C	2.97 V	3.63 V	Surface Mount	27 mA	Differential	Wafer	Transimpedance	1	9 GHz	Die

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	271	$ 3.45
Texas Instruments	OTHER	1	$ 3.73
		100	$ 3.27
		250	$ 2.29
		1000	$ 1.85

Description

General part information

ONET8541T Series

The ONET8541T is a high-speed, high gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3Gbps. It features low input referred noise, 9GHz bandwidth, 4kΩ small signal transimpedance, and a received signal strength indicator (RSSI).

The ONET8541T is available in die form, includes an on-chip VCCbypass capacitor and is optimized for packaging in a TO can.

The ONET8541T requires a single 3.3V ±10% supply and its power efficient design typically dissipates less than 90mW. The device is characterized for operation from –40°C to 100°C case (IC back side) temperature.

Documents

Technical documentation and resources

11.3 Gbps Limiting Transimpedance Amplifier with RSSI . datasheet (Rev. A)

Data sheet