Catalog
9-GHz, 4-kΩ transimpedance amplifier with RSSI
Key Features
• 9 GHz Bandwidth4 kΩ Differential Small Signal Transimpedance-20dBm Sensitivity0.95 µARMSInput Referred Noise2.5 mAPPInput Overload CurrentReceived Signal Strength Indication (RSSI)90 mW Typical Power DissipationCML Data Outputs with On-Chip 50Ω Back-TerminationOn Chip Supply Filter CapacitorSingle 3.3 V SupplyDie Size: 870 µm × 1036 µm9 GHz Bandwidth4 kΩ Differential Small Signal Transimpedance-20dBm Sensitivity0.95 µARMSInput Referred Noise2.5 mAPPInput Overload CurrentReceived Signal Strength Indication (RSSI)90 mW Typical Power DissipationCML Data Outputs with On-Chip 50Ω Back-TerminationOn Chip Supply Filter CapacitorSingle 3.3 V SupplyDie Size: 870 µm × 1036 µm
Description
AI
The ONET8541T is a high-speed, high gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3Gbps. It features low input referred noise, 9GHz bandwidth, 4kΩ small signal transimpedance, and a received signal strength indicator (RSSI).
The ONET8541T is available in die form, includes an on-chip VCCbypass capacitor and is optimized for packaging in a TO can.
The ONET8541T requires a single 3.3V ±10% supply and its power efficient design typically dissipates less than 90mW. The device is characterized for operation from –40°C to 100°C case (IC back side) temperature.
The ONET8541T is a high-speed, high gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3Gbps. It features low input referred noise, 9GHz bandwidth, 4kΩ small signal transimpedance, and a received signal strength indicator (RSSI).
The ONET8541T is available in die form, includes an on-chip VCCbypass capacitor and is optimized for packaging in a TO can.
The ONET8541T requires a single 3.3V ±10% supply and its power efficient design typically dissipates less than 90mW. The device is characterized for operation from –40°C to 100°C case (IC back side) temperature.
