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STMicroelectronics-STW6N95K5 MOSFETs Trans MOSFET N-CH 950V 9A 3-Pin(3+Tab) TO-247 Tube
Discrete Semiconductor Products

STPSC2006CW

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STMicroelectronics

DIODE SCHOTTKY 600V 20A 3-PIN(3+TAB) TO-247 TUBE

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DocumentsDatasheet+10
STMicroelectronics-STW6N95K5 MOSFETs Trans MOSFET N-CH 950V 9A 3-Pin(3+Tab) TO-247 Tube
Discrete Semiconductor Products

STPSC2006CW

Active
STMicroelectronics

DIODE SCHOTTKY 600V 20A 3-PIN(3+TAB) TO-247 TUBE

Deep-Dive with AI

DocumentsDatasheet+10

Technical Specifications

Parameters and characteristics for this part

SpecificationSTPSC2006CW
Current - Average Rectified (Io) (per Diode)10 A
Current - Reverse Leakage @ Vr150 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-40 °C
Package / CaseTO-247-3
Speed500 ns, 200 mA
Supplier Device PackageTO-247
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 9.32
Tube 1$ 8.06
30$ 6.44
120$ 5.76
510$ 5.08

Description

General part information

STPSC2006 Series

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.ST SiC diodes will boost the performance of PFC operations in hard switching conditions.No or negligible reverse recoverySwitching behavior independent of temperatureParticularly suitable in PFC boost diode function