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STW14NK50Z
Discrete Semiconductor Products

STW14NK50Z

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STMicroelectronics

N-CHANNEL 500V - 0.34 OHM - 14A TO-247 ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET

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STW14NK50Z
Discrete Semiconductor Products

STW14NK50Z

Active
STMicroelectronics

N-CHANNEL 500V - 0.34 OHM - 14A TO-247 ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW14NK50Z
Current - Continuous Drain (Id) @ 25°C14 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs92 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2000 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)150 W
Rds On (Max) @ Id, Vgs380 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 86$ 2.44
MouserN/A 1$ 3.09
10$ 3.07
25$ 2.30
100$ 2.14
250$ 2.09
600$ 2.08
1200$ 2.01
5400$ 1.96
NewarkEach 1$ 4.60
10$ 4.15
120$ 3.47
510$ 3.13
1020$ 2.76
2520$ 2.23

Description

General part information

STW14NK50Z Series

The SuperMESHTMseries is obtained through an extreme optimization of ST’s well established strip-based PowerMESHTMlayout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTMproducts.