Discrete Semiconductor Products

IRFDC20PBF

LTB

MOSFET N-CH 600V 320MA 4DIP

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Discrete Semiconductor Products

LTB

MOSFET N-CH 600V 320MA 4DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRFDC20PBF

Current - Continuous Drain (Id) @ 25°C	320 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs [Max]	4.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology
Vishay General Semiconductor - Diodes Division IRFDC20PBF	20 V	4 V	10 V	N-Channel	Through Hole	4-DIP (0.300" 7.62mm)	600 V	350 pF	-55 °C	150 °C	4.4 Ohm	18 nC	320 mA	1 W	MOSFET (Metal Oxide)

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General part information

N-Channel 600 V 320mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

Technical documentation and resources