IRFDC20 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 600V 320MA 4DIP
| Part | Vgs (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Mounting Type | Package / Case | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 20 V | 4 V | 10 V | N-Channel | Through Hole | 4-DIP (0.300" 7.62mm) | 600 V | 350 pF | -55 °C | 150 °C | 4.4 Ohm | 18 nC | 320 mA | 1 W | MOSFET (Metal Oxide) |