Specification	NVB125N65S3

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	1940 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	181 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

NVB125N65S3 Series

MOSFET - Power, N-Channel, SUPERFET® III, Automotive, Easy-drive, 650 V, 24 A, 125 mΩ

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package
ON Semiconductor NVB125N65S3	MOSFET (Metal Oxide)	1940 pF	46 nC	181 W	30 V	-55 °C	150 °C	4.5 V	Surface Mount	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	125 mOhm	N-Channel	24 A	650 V	TO-263 (D2PAK)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.90
		10	$ 3.27
		100	$ 2.65
	Digi-Reel®	1	$ 3.90
		10	$ 3.27
		100	$ 2.65
	Tape & Reel (TR)	800	$ 2.35
		1600	$ 2.02
		2400	$ 1.90
Newark	Each	500	$ 1.94
ON Semiconductor	N/A	1	$ 1.68

Description

General part information

NVB125N65S3 Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability