NVB125N65S3 Series

MOSFET - Power, N-Channel, SUPERFET® III, Automotive, Easy-drive, 650 V, 24 A, 125 mΩ

Catalog

MOSFET - Power, N-Channel, SUPERFET® III, Automotive, Easy-drive, 650 V, 24 A, 125 mΩ

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package
ON Semiconductor NVB125N65S3	MOSFET (Metal Oxide)	1940 pF	46 nC	181 W	30 V	-55 °C	150 °C	4.5 V	Surface Mount	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	125 mOhm	N-Channel	24 A	650 V	TO-263 (D2PAK)

Catalog

MOSFET - Power, N-Channel, SUPERFET® III, Automotive, Easy-drive, 650 V, 24 A, 125 mΩ

Key Features

• Best in Class body diode

• Low RDS (ON)/ Same Packages

• Lower FOM (RDS (ON) maxX QG typ& RDS (ON) maxX EOSS

• Internal Zener / 650V BVdss

• Internal Rg

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability