Specification	NVB150N65S3F

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1999 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	192 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

NVB150N65S3F Series

Single N-Channel Power MOSFET SUPERFET® III, FRFET, 650 V , 24 A, 150 mΩ, D2PAK

Part	Qualification	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Grade	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)
ON Semiconductor NVB150N65S3F	AEC-Q101	150 mOhm	1999 pF	5 V	24 A	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	10 V	Automotive	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	192 W	N-Channel	43 nC	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 5.10
		10	$ 3.39
		100	$ 2.42
	Digi-Reel®	1	$ 5.10
		10	$ 3.39
		100	$ 2.42
	Tape & Reel (TR)	800	$ 1.94
Newark	Each	500	$ 2.07
ON Semiconductor	N/A	1	$ 1.79

Description

General part information

NVB150N65S3F Series

- SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability