NVB150N65S3F Series

Single N-Channel Power MOSFET SUPERFET® III, FRFET, 650 V , 24 A, 150 mΩ, D2PAK

Catalog

Single N-Channel Power MOSFET SUPERFET® III, FRFET, 650 V , 24 A, 150 mΩ, D2PAK

Part	Qualification	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Grade	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)
ON Semiconductor NVB150N65S3F	AEC-Q101	150 mOhm	1999 pF	5 V	24 A	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	10 V	Automotive	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	192 W	N-Channel	43 nC	30 V

Catalog

Single N-Channel Power MOSFET SUPERFET® III, FRFET, 650 V , 24 A, 150 mΩ, D2PAK

Key Features

• Low RDS(on)

• Low QGand Capacitance

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

- SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability