Discrete Semiconductor Products
STP160N3LL
ActiveSTMicroelectronics
N-CHANNEL 30 V, 2.5 MOHM TYP., 120 A, STRIPFET H6 POWER MOSFET IN A TO-220 PACKAGE
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Discrete Semiconductor Products
STP160N3LL
ActiveSTMicroelectronics
N-CHANNEL 30 V, 2.5 MOHM TYP., 120 A, STRIPFET H6 POWER MOSFET IN A TO-220 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STP160N3LL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 42 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 136 W |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP160N3LL Series
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.