Specification	FDG311N

Current - Continuous Drain (Id) @ 25°C	1.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	270 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	750 mW
Rds On (Max) @ Id, Vgs [Max]	115 mOhm
Supplier Device Package	SC-88 (SC-70-6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

FDG311N Series

N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology
ON Semiconductor FDG311N	20 V	115 mOhm	SC-88 (SC-70-6)	-55 °C	150 °C	1.9 A	N-Channel	8 V	270 pF	Surface Mount	1.5 V	750 mW	6-TSSOP SC-88 SOT-363	2.5 V 4.5 V	MOSFET (Metal Oxide)
ON Semiconductor FDG311N	20 V	115 mOhm	SC-88 (SC-70-6)	-55 °C	150 °C	1.9 A	N-Channel	8 V	270 pF	Surface Mount	1.5 V	750 mW	6-TSSOP SC-88 SOT-363	2.5 V 4.5 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1466	$ 0.20
		1466	$ 0.20

Description

General part information

FDG311N Series

This N-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.