FDG311N Series

N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ

Catalog

N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology
ON Semiconductor FDG311N	20 V	115 mOhm	SC-88 (SC-70-6)	-55 °C	150 °C	1.9 A	N-Channel	8 V	270 pF	Surface Mount	1.5 V	750 mW	6-TSSOP SC-88 SOT-363	2.5 V 4.5 V	MOSFET (Metal Oxide)
ON Semiconductor FDG311N	20 V	115 mOhm	SC-88 (SC-70-6)	-55 °C	150 °C	1.9 A	N-Channel	8 V	270 pF	Surface Mount	1.5 V	750 mW	6-TSSOP SC-88 SOT-363	2.5 V 4.5 V	MOSFET (Metal Oxide)

Catalog

N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ

Key Features

• 1.9 A, 20 V

• RDS(ON)= 0.115 Ω @ VGS= 4.5 V

• RDS(ON)= 0.150 Ω @ VGS= 2.5 V

• Low gate charge (3nC typical).

• High performance trench technology for extremely low RDS(ON).

• Compact industry standard SC70-6 surface mountpackage.

Description

This N-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.