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8-DFN
Discrete Semiconductor Products

NTMFSC006N12MC

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ON Semiconductor

N-CHANNEL DUAL COOLTM 56 POWERTRENCH® MOSFET 120 V, 92 A, 6.0MΩ

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8-DFN
Discrete Semiconductor Products

NTMFSC006N12MC

Active
ON Semiconductor

N-CHANNEL DUAL COOLTM 56 POWERTRENCH® MOSFET 120 V, 92 A, 6.0MΩ

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMFSC006N12MC
Current - Continuous Drain (Id) @ 25°C14 A, 92 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]39 nC
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Rds On (Max) @ Id, Vgs6.1 mOhm
Supplier Device Package8-DFN (5x6.15)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.17
10$ 2.07
100$ 1.44
500$ 1.16
1000$ 1.08
Digi-Reel® 1$ 3.17
10$ 2.07
100$ 1.44
500$ 1.16
1000$ 1.08
Tape & Reel (TR) 3000$ 1.02
NewarkEach (Supplied on Full Reel) 1000$ 1.41
ON SemiconductorN/A 1$ 1.09

Description

General part information

NTMFSC006N12MC Series

This N-Channel MOSFET is produced using onsemi’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Documents

Technical documentation and resources