STPSC6H065BY-TR
ActiveAUTOMOTIVE 650 V, 6 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE
STPSC6H065BY-TR
ActiveAUTOMOTIVE 650 V, 6 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC6H065BY-TR |
|---|---|
| Capacitance @ Vr, F | 300 pF |
| Current - Average Rectified (Io) | 6 A |
| Current - Reverse Leakage @ Vr | 60 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | DPAK |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
STPSC6H065BY-TR Series
Automotive 650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
| Part | Speed | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) (per Diode) | Supplier Device Package | Current - Reverse Leakage @ Vr | Package / Case | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Technology | Mounting Type | Diode Configuration | Grade | Capacitance @ Vr, F | Current - Average Rectified (Io) | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | No Recovery Time | 1.75 V | 6 A | TO-220AB Insulated | 60 µA | TO-220-3 | 0 ns | 650 V | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | Through Hole | 1 Pair Series Connection | ||||
STMicroelectronics | No Recovery Time | DPAK | 60 µA | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 0 ns | 650 V | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | Surface Mount | Automotive | 300 pF | 6 A | AEC-Q101 | |||
 STMicroelectronics | No Recovery Time | 1.75 V | DPAK | 60 µA | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 0 ns | 650 V | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | Surface Mount | 300 pF | 6 A | ||||
 STMicroelectronics | No Recovery Time | 1.75 V | D2PAK | 60 µA | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 0 ns | 650 V | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | Surface Mount | 300 pF | 6 A | ||||
STMicroelectronics | No Recovery Time | 1.9 V | DPAK | 400 µA | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 0 ns | 1.2 kV | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | Surface Mount | 330 pF | 6 A |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.44 | |
| 10 | $ 2.24 | |||
| 100 | $ 1.56 | |||
| 500 | $ 1.27 | |||
| 1000 | $ 1.18 | |||
| Digi-Reel® | 1 | $ 3.44 | ||
| 10 | $ 2.24 | |||
| 100 | $ 1.56 | |||
| 500 | $ 1.27 | |||
| 1000 | $ 1.18 | |||
| Tape & Reel (TR) | 2500 | $ 1.09 | ||
Description
General part information
STPSC6H065BY-TR Series
This 6 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
This STPSC6H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Documents
Technical documentation and resources