Specification	NDF06N62ZG

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	923 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

NDF06N60Z Series

Power MOSFET 600V 7.1A 1.2 Ohm Single N-Channel TO-220FP

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor NDF06N62ZG	31 W	4.5 V	923 pF	N-Channel	Through Hole	30 V	TO-220FP	6 A	620 V	MOSFET (Metal Oxide)	32 nC	10 V	-55 °C	150 °C	1.2 Ohm	TO-220-3 Full Pack
ON Semiconductor NDF06N60ZH		4.5 V	1107 pF	N-Channel	Through Hole	30 V	TO-220-2 Full Pack	7.1 A	600 V	MOSFET (Metal Oxide)		10 V	-55 °C	150 °C	1.2 Ohm	TO-220-3 Full Pack	35 W
ON Semiconductor NDF0610		3.5 V	60 pF	P-Channel	Through Hole		TO-92-3	180 mA	60 V	MOSFET (Metal Oxide)	1.43 nC					TO-226-3 TO-92-3		10 Ohm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 620V 1.2 Ohm Single N-Channel

Technical documentation and resources