Discrete Semiconductor Products

NDF0610

Obsolete

MOSFET P-CH 60V 180MA TO92-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 180MA TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	NDF0610

Current - Continuous Drain (Id) @ 25°C	180 mA
Drain to Source Voltage (Vdss)	60 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.43 nC
Input Capacitance (Ciss) (Max) @ Vds	60 pF
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3
Rds On (Max) @ Id, Vgs [Max]	10 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.5 V

Power MOSFET 600V 7.1A 1.2 Ohm Single N-Channel TO-220FP

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor NDF06N62ZG	31 W	4.5 V	923 pF	N-Channel	Through Hole	30 V	TO-220FP	6 A	620 V	MOSFET (Metal Oxide)	32 nC	10 V	-55 °C	150 °C	1.2 Ohm	TO-220-3 Full Pack
ON Semiconductor NDF06N60ZH		4.5 V	1107 pF	N-Channel	Through Hole	30 V	TO-220-2 Full Pack	7.1 A	600 V	MOSFET (Metal Oxide)		10 V	-55 °C	150 °C	1.2 Ohm	TO-220-3 Full Pack	35 W
ON Semiconductor NDF0610		3.5 V	60 pF	P-Channel	Through Hole		TO-92-3	180 mA	60 V	MOSFET (Metal Oxide)	1.43 nC					TO-226-3 TO-92-3		10 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 620V 1.2 Ohm Single N-Channel

Technical documentation and resources