Discrete Semiconductor Products

HUF75652G3

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POWER MOSFET, N CHANNEL, 100 V, 75 A, 0.0067 OHM, TO-247, THROUGH HOLE

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 100 V, 75 A, 0.0067 OHM, TO-247, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	HUF75652G3

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	475 nC
Input Capacitance (Ciss) (Max) @ Vds	7585 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	515 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

N-Channel UltraFET<sup>®</sup> Power MOSFET 100V, 75A, 8mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology
ON Semiconductor HUF75652G3	7585 pF	75 A	100 V	8 mOhm	20 V	515 W	4 V	TO-247-3	TO-247-3	N-Channel	Through Hole	475 nC	-55 °C	175 ░C	10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.42
		10	$ 7.20
		100	$ 5.37
		500	$ 5.01
Newark	Each	250	$ 5.70
ON Semiconductor	N/A	1	$ 5.35

General part information

N-Channel UltraFET®Power MOSFET 100 V, 75 A, 8 mΩ

Technical documentation and resources