HUF75652G3 Series

N-Channel UltraFET® Power MOSFET 100V, 75A, 8mΩ

Catalog

N-Channel UltraFET® Power MOSFET 100V, 75A, 8mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology
ON Semiconductor HUF75652G3	7585 pF	75 A	100 V	8 mOhm	20 V	515 W	4 V	TO-247-3	TO-247-3	N-Channel	Through Hole	475 nC	-55 °C	175 ░C	10 V	MOSFET (Metal Oxide)

N-Channel UltraFET® Power MOSFET 100V, 75A, 8mΩ

• Ultra Low On-ResistancerDS(ON)= 0.008Ω, VGS= 10V

• Temperature Compensated PSPICE®and SABER™ Electrical Models

• Spice and SABER Thermal Impedance Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

N-Channel UltraFET®Power MOSFET 100 V, 75 A, 8 mΩ