Discrete Semiconductor Products

SIJ186DP-T1-GE3

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MOSFET N-CH 60V 23A/79.4A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 60V 23A/79.4A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIJ186DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	79.4 A, 23 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1710 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	57 W, 5 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

Part	Power Dissipation (Max)	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIJ186DP-T1-GE3	5 W 57 W	MOSFET (Metal Oxide)	PowerPAK® SO-8	3.6 V	4.5 mOhm	N-Channel	20 V	60 V	1710 pF	23 A 79.4 A	PowerPAK® SO-8	Surface Mount	6 V 10 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 23A (Ta), 79.4A (Tc) 5W (Ta), 57W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources