SIJ186 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 23A/79.4A PPAK
| Part | Power Dissipation (Max) | Technology | Supplier Device Package | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 5 W 57 W | MOSFET (Metal Oxide) | PowerPAK® SO-8 | 3.6 V | 4.5 mOhm | N-Channel | 20 V | 60 V | 1710 pF | 23 A 79.4 A | PowerPAK® SO-8 | Surface Mount | 6 V 10 V | -55 °C | 150 °C |