Discrete Semiconductor Products

FDB12N50FTM-WS

Obsolete

ON Semiconductor

MOSFET N-CH 500V 11.5A D2PAK

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Discrete Semiconductor Products

FDB12N50FTM-WS

Obsolete

ON Semiconductor

MOSFET N-CH 500V 11.5A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDB12N50FTM-WS

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1395 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	165 W
Rds On (Max) @ Id, Vgs	700 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDB12N50TM Series

Power MOSFET, N-Channel, UniFET<sup>TM</sup>, 500 V, 11.5 A, 650 mΩ, D2PAK

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
ON Semiconductor FDB12N50FTM-WS	700 mOhm	30 nC	11.5 A	MOSFET (Metal Oxide)	500 V	1395 pF	10 V	N-Channel	Surface Mount	165 W	TO-263 (D2PAK)	5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	150 °C	30 V
ON Semiconductor FDB12N50TM	650 mOhm	30 nC	11.5 A	MOSFET (Metal Oxide)	500 V	1315 pF	10 V	N-Channel	Surface Mount	165 W	TO-263 (D2PAK)	5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	150 °C	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDB12N50TM Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Documents

Technical documentation and resources