Discrete Semiconductor Products

NGTB45N60S1WG

Obsolete

ON Semiconductor

IGBT, 600 V/45 A - WELDING

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DocumentsDatasheet Package Drawing-340AL-TO-247 +1

Discrete Semiconductor Products

NGTB45N60S1WG

Obsolete

ON Semiconductor

IGBT, 600 V/45 A - WELDING

Deep-Dive with AI

DocumentsDatasheet Package Drawing-340AL-TO-247 +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NGTB45N60S1WG

Current - Collector (Ic) (Max) [Max]	90 A
Current - Collector Pulsed (Icm)	180 A
Gate Charge	125 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	300 W
Reverse Recovery Time (trr)	70 ns
Supplier Device Package	TO-247-3
Switching Energy	1.25 mJ, 530 µJ
Td (on/off) @ 25°C	72 ns, 132 ns
Test Condition	15 V, 45 A, 10 Ohm, 400 V
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

NGTB45N60S1 Series

IGBT, 600 V/45 A - Welding

Part	Supplier Device Package	Test Condition	Mounting Type	Switching Energy	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Package / Case	Gate Charge	Reverse Recovery Time (trr)	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)
ON Semiconductor NGTB45N60S1WG	TO-247-3	10 Ohm 15 V 45 A 400 V	Through Hole	1.25 mJ 530 µJ	90 A	2.4 V	300 W	TO-247-3	125 nC	70 ns	-55 °C	175 ░C	72 ns 132 ns	Trench	600 V	180 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NGTB45N60S1 Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastco−packaged free wheeling diode with a low forward voltage.