NGTB45N60S1 Series

IGBT, 600 V/45 A - Welding

Catalog

IGBT, 600 V/45 A - Welding

Part	Supplier Device Package	Test Condition	Mounting Type	Switching Energy	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Package / Case	Gate Charge	Reverse Recovery Time (trr)	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)
ON Semiconductor NGTB45N60S1WG	TO-247-3	10 Ohm 15 V 45 A 400 V	Through Hole	1.25 mJ 530 µJ	90 A	2.4 V	300 W	TO-247-3	125 nC	70 ns	-55 °C	175 ░C	72 ns 132 ns	Trench	600 V	180 A

Catalog

IGBT, 600 V/45 A - Welding

Key Features

• TJmax = 175°C

• Soft Fast Reverse Recovery Diode

• Optimized for High Speed Switching

• 5µ s Short−Circuit Capability

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastco−packaged free wheeling diode with a low forward voltage.