Specification	FDB3502

Current - Continuous Drain (Id) @ 25°C	6 A, 14 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.1 W, 41 W
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

FDB3502 Series

N-Channel Power Trench® MOSFET 75V, 14A, 47mΩ

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDB3502	75 V	TO-263 (D2PAK)	10 V	4.5 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	6 A 14 A	N-Channel	Surface Mount	3.1 W 41 W	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.41
		10	$ 1.55
		100	$ 1.06
	Digi-Reel®	1	$ 2.41
		10	$ 1.55
		100	$ 1.06
	Tape & Reel (TR)	800	$ 0.80
		1600	$ 0.74
		2400	$ 0.71
		4000	$ 0.70
Newark	Each (Supplied on Full Reel)	1	$ 0.97
		3000	$ 0.93
		6000	$ 0.84
		12000	$ 0.76
		18000	$ 0.73
		30000	$ 0.71
ON Semiconductor	N/A	1	$ 0.65

Description

General part information

FDB3502 Series

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.