FDB3502 Series

N-Channel Power Trench® MOSFET 75V, 14A, 47mΩ

Catalog

N-Channel Power Trench® MOSFET 75V, 14A, 47mΩ

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDB3502	75 V	TO-263 (D2PAK)	10 V	4.5 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	6 A 14 A	N-Channel	Surface Mount	3.1 W 41 W	-55 °C	150 °C

Catalog

N-Channel Power Trench® MOSFET 75V, 14A, 47mΩ

Key Features

• Max rDS(on)= 47mΩ at VGS= 10V, ID= 6A

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.