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Technical Specifications
Parameters and characteristics for this part
| Specification | ISO5851EVM |
|---|---|
| Contents | Board(s) |
| Embedded | False |
| Function | Gate Driver |
| Supplied Contents | Board(s) |
| Type | Power Management |
| Utilized IC / Part | ISO5851 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Box | 1 | $ 58.80 | |
Description
General part information
ISO5851-Q1 Series
The ISO5851-Q1 is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.
An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to VEE2potential, turning the IGBT immediately off.
When desaturation is active, a fault signal is sent across the isolation barrier, pulling theFLToutput at the input side low and blocking the isolator input. TheFLToutput condition is latched and can be reset through a low-active pulse at theRSTinput.
Documents
Technical documentation and resources