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Discrete Semiconductor Products

STB55NF06LT4

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STMicroelectronics

POWER MOSFET, N CHANNEL, 30 V, 55 A, 0.014 OHM, TO-263 (D2PAK), SURFACE MOUNT

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

STB55NF06LT4

Active

STMicroelectronics

POWER MOSFET, N CHANNEL, 30 V, 55 A, 0.014 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB55NF06LT4

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	37 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	95 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id [Max]	4.7 V

STB55 Series

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]
STMicroelectronics STB55NF06T4	D2PAK	10 V	MOSFET (Metal Oxide)	20 V	60 nC	18 mOhm	175 °C	-55 °C	60 V	4 V	1300 pF	110 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	50 A	Surface Mount	N-Channel
STMicroelectronics STB55NF06LT4	D2PAK	5 V 10 V	MOSFET (Metal Oxide)	16 V	37 nC	18 mOhm	175 °C	-55 °C	60 V			95 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	55 A	Surface Mount	N-Channel	10 V	5 V	1700 pF	4.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1000	$ 0.74
		2000	$ 0.69
Digikey	Cut Tape (CT)	1	$ 1.79
		10	$ 1.49
		100	$ 1.18
		500	$ 1.00
	Digi-Reel®	1	$ 1.79
		10	$ 1.49
		100	$ 1.18
		500	$ 1.00
	N/A	886	$ 2.20
	Tape & Reel (TR)	1000	$ 0.85
		2000	$ 0.81
		5000	$ 0.78
		10000	$ 0.75
Newark	Each (Supplied on Cut Tape)	1	$ 2.58
		10	$ 1.84
		25	$ 1.71
		50	$ 1.57
		100	$ 1.44
		250	$ 1.40
		500	$ 1.22
		1000	$ 1.14

Description

General part information

STB55 Series

This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility."Exceptional dv/dt capability100% avalanche testedApplication oriented characterization