Discrete Semiconductor Products

STP42N60M2-EP

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STMicroelectronics

N-CHANNEL 600 V, 0.076 OHM TYP., 34 A MDMESH M2 EP POWER MOSFET IN A TO-220 PACKAGE

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Discrete Semiconductor Products

STP42N60M2-EP

Active

STMicroelectronics

N-CHANNEL 600 V, 0.076 OHM TYP., 34 A MDMESH M2 EP POWER MOSFET IN A TO-220 PACKAGE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP42N60M2-EP

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2370 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	87 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STP42N60M2-EP Series

N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-220 package

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Operating Temperature	Power Dissipation (Max) [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STP42N65M5	N-Channel	10 V	33 A	Through Hole	100 nC	4650 pF	TO-220-3	MOSFET (Metal Oxide)	150 °C	190 W	TO-220	650 V	25 V	5 V	79 mOhm
STMicroelectronics STP42N60M2-EP	N-Channel	10 V	34 A	Through Hole			TO-220-3	MOSFET (Metal Oxide)	150 °C	250 W	TO-220	600 V	25 V	4.75 V	87 mOhm	2370 pF	55 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1000	$ 2.80
Digikey	Tube	1	$ 6.26
		50	$ 4.96
		100	$ 4.25
		500	$ 3.78
		1000	$ 3.24
		2000	$ 3.05
Newark	Each	1	$ 6.36
		10	$ 6.34
		25	$ 4.78

Description

General part information

STP42N60M2-EP Series

MDmesh V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies.