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TO-247-3 AB EP
Discrete Semiconductor Products

HGTG5N120BND

Obsolete
ON Semiconductor

IGBT NPT 1200V 21A TO247-3

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TO-247-3 AB EP
Discrete Semiconductor Products

HGTG5N120BND

Obsolete
ON Semiconductor

IGBT NPT 1200V 21A TO247-3

Technical Specifications

Parameters and characteristics for this part

SpecificationHGTG5N120BND
Current - Collector (Ic) (Max) [Max]21 A
Current - Collector Pulsed (Icm)40 A
Gate Charge53 nC
IGBT TypeNPT
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]167 W
Reverse Recovery Time (trr)65 ns
Supplier Device PackageTO-247-3
Switching Energy390 µJ, 450 µJ
Td (on/off) @ 25°C22 ns
Td (on/off) @ 25°C160 ns
Test Condition15 V, 25 Ohm, 5 A, 960 V
Vce(on) (Max) @ Vge, Ic2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.15
30$ 2.29
120$ 1.88
510$ 1.58
1020$ 1.47
2010$ 1.43

Description

General part information

HGTG5N120BND Series

HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.