HGTG5N120BND Series

1200V, NPT IGBT

Catalog

1200V, NPT IGBT

Part	Gate Charge	Current - Collector Pulsed (Icm)	Mounting Type	Package / Case	Vce(on) (Max) @ Vge, Ic	IGBT Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Switching Energy	Reverse Recovery Time (trr)	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition
ON Semiconductor HGTG5N120BND	53 nC	40 A	Through Hole	TO-247-3	2.7 V	NPT	-55 °C	150 °C	TO-247-3	390 µJ 450 µJ	65 ns	167 W	21 A	22 ns	160 ns	1200 V	5 A 15 V 25 Ohm 960 V

Catalog

1200V, NPT IGBT

Key Features

• 10A, 1200V, TC= 110°C

• Low Saturation Voltage : VCE(sat)= 2.45 V @ IC= 5A

• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ= 150°C

• Short Circuit Rating

• Low Conduction Loss

Description

HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.