Discrete Semiconductor Products

SI1400DL-T1-GE3

Obsolete

MOSFET N-CH 20V 1.6A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 1.6A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1400DL-T1-GE3

Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	568 mW
Rds On (Max) @ Id, Vgs [Max]	150 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	600 mV

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI1400DL-T1-E3	568 mW	4 nC	20 V	2.5 V 4.5 V	MOSFET (Metal Oxide)	150 mOhm	12 V	600 mV	Surface Mount	1.6 A	6-TSSOP SC-88 SOT-363	N-Channel	SC-70-6	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI1400DL-T1-GE3	568 mW	4 nC	20 V	2.5 V 4.5 V	MOSFET (Metal Oxide)	150 mOhm	12 V	600 mV	Surface Mount	1.6 A	6-TSSOP SC-88 SOT-363	N-Channel	SC-70-6	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 1.6A (Ta) 568mW (Ta) Surface Mount SC-70-6

Technical documentation and resources