SI1400 Series

Catalog

MOSFET N-CH 20V 1.6A SC70-6

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI1400DL-T1-E3	568 mW	4 nC	20 V	2.5 V 4.5 V	MOSFET (Metal Oxide)	150 mOhm	12 V	600 mV	Surface Mount	1.6 A	6-TSSOP SC-88 SOT-363	N-Channel	SC-70-6	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI1400DL-T1-GE3	568 mW	4 nC	20 V	2.5 V 4.5 V	MOSFET (Metal Oxide)	150 mOhm	12 V	600 mV	Surface Mount	1.6 A	6-TSSOP SC-88 SOT-363	N-Channel	SC-70-6	-55 °C	150 °C