Specification	ECH8310-TL-H

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	8-ECH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

ECH8310 Series

P-Channel Power MOSFET, -30 V, -9 A, 17 mΩ

Part	Power Dissipation (Max)	Operating Temperature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor ECH8310-TL-H	1.5 W	150 °C	8-ECH	28 nC	9 A	Surface Mount	P-Channel	30 V	17 mOhm	MOSFET (Metal Oxide)	4 V	10 V	20 V	1400 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

ECH8310 is a P-Channel Power MOSFET, -30V, -9A, 17mΩ, Single ECH8 for General-Purpose Switching Device Application.