Catalog
P-Channel Power MOSFET, -30 V, -9 A, 17 mΩ
Key Features
• 4V drive
• Protection diode in
Description
AI
ECH8310 is a P-Channel Power MOSFET, -30V, -9A, 17mΩ, Single ECH8 for General-Purpose Switching Device Application.
Beta
⌘K
P-Channel Power MOSFET, -30 V, -9 A, 17 mΩ
P-Channel Power MOSFET, -30 V, -9 A, 17 mΩ
| Part | Power Dissipation (Max) | Operating Temperature | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | FET Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 1.5 W | 150 °C | 8-ECH | 28 nC | 9 A | Surface Mount | P-Channel | 30 V | 17 mOhm | MOSFET (Metal Oxide) | 4 V | 10 V | 20 V | 1400 pF |