2STR1160
ActiveBIPOLAR TRANSISTORS - BJT LOW-VOLT FAST SWITCH NPN PWR TRAN
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2STR1160
ActiveBIPOLAR TRANSISTORS - BJT LOW-VOLT FAST SWITCH NPN PWR TRAN
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2STR1160 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 180 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | SOT-23-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 430 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
2STR1160 Series
The device in a NPN transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.The complementary PNP is the 2STR2160.Very low collector-emitter saturation voltageHigh current gain characteristicFast switching speedMiniature SOT-23 plastic package for surface mounting circuits
Documents
Technical documentation and resources