Zenode.ai Logo
Beta
NXH200T120H3Q2F2SG
Discrete Semiconductor Products

NXH200T120H3Q2F2SG

Active
ON Semiconductor

SI/SIC HYBRID MODULE, SPLIT T-TYPE NPC INVERTER

Deep-Dive with AI

Search across all available documentation for this part.

NXH200T120H3Q2F2SG
Discrete Semiconductor Products

NXH200T120H3Q2F2SG

Active
ON Semiconductor

SI/SIC HYBRID MODULE, SPLIT T-TYPE NPC INVERTER

Technical Specifications

Parameters and characteristics for this part

SpecificationNXH200T120H3Q2F2SG
ConfigurationHalf Bridge
Current - Collector (Ic) (Max) [Max]330 A
Current - Collector Cutoff (Max) [Max]500 çA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce35.615 nF
Mounting TypeChassis Mount
NTC ThermistorFalse
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseModule
Power - Max [Max]679 W
Supplier Device Package56-PIM/Q2PACK
Supplier Device Package [x]93
Supplier Device Package [y]47
Vce(on) (Max) @ Vge, Ic2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 134.64
10$ 116.91
NewarkEach 25$ 129.08
50$ 127.20
100$ 119.72
ON SemiconductorN/A 1$ 107.56

Description

General part information

NXH200T120H3Q2 Series

The NXH200T120H3Q2 is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 200A/1200V half-bridge IGBTs with inverse diodes, two neutral point 100A/650V SiC diodes, two 150A/650V neutral point IGBTs with inverse diodes, two half-bridge 150A/1200V rectifiers and a negative temperature coefficient thermistor (NTC).