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Discrete Semiconductor Products

CSD17308Q3T

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 11.8 MOHM

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VSON-CLIP (DQG)
Discrete Semiconductor Products

CSD17308Q3T

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 11.8 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD17308Q3T
Current - Continuous Drain (Id) @ 25°C44 A, 14 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]3 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)28 W, 2.7 W
Rds On (Max) @ Id, Vgs10.3 mOhm
Supplier Device Package8-VSON-CLIP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]10 V
Vgs (Max) [Min]-8 V
Vgs(th) (Max) @ Id1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.01
10$ 0.83
100$ 0.64
Digi-Reel® 1$ 1.01
10$ 0.83
100$ 0.64
Tape & Reel (TR) 250$ 0.64
500$ 0.54
1250$ 0.44
2500$ 0.42
6250$ 0.40
12500$ 0.38
25000$ 0.38
Texas InstrumentsSMALL T&R 1$ 0.75
100$ 0.58
250$ 0.42
1000$ 0.30

Description

General part information

CSD17308Q3 Series

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.