STB9NK90Z
ActiveN-CHANNEL 900 V, 1.1 OHM TYP., 8 A SUPERMESH POWER MOSFET IN A D2PAK PACKAGE
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STB9NK90Z
ActiveN-CHANNEL 900 V, 1.1 OHM TYP., 8 A SUPERMESH POWER MOSFET IN A D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB9NK90Z |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8 A |
| Drain to Source Voltage (Vdss) | 900 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2115 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Rds On (Max) @ Id, Vgs | 1.3 Ohm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 628 | $ 5.13 | |
Description
General part information
STB9NK90Z Series
The SuperMESH series is obtained through an optimization of STMicroelectronics wellestablished strip-based PowerMESH layout. In addition to pushing on-resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applications. This series complement STs full range of high voltage power MOSFETs.
Documents
Technical documentation and resources