Specification	STW70N60M2

Current - Continuous Drain (Id) @ 25°C	68 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Input Capacitance (Ciss) (Max) @ Vds	5200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	450 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STW70N60M2 Series

N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)
STMicroelectronics STW70N60M2	5200 pF	TO-247-3	450 W	68 A	10 V	4 V	150 °C	-55 °C	600 V	Through Hole	118 nC	MOSFET (Metal Oxide)	TO-247	N-Channel	40 mOhm	25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 6.32
		10	$ 6.15
		50	$ 5.06
		100	$ 5.06
		500	$ 5.04
Digikey	N/A	488	$ 6.41

Description

General part information

STW70N60M2 Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.