Specification	CSD19534Q5A

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	63 W, 3.2 W
Rds On (Max) @ Id, Vgs	15.1 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

CSD19534Q5A Series

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Power Dissipation (Max)	FET Type
Texas Instruments CSD19534Q5A	-55 °C	150 °C	100 V	3.4 V	44 A	1680 pF	MOSFET (Metal Oxide)	22 nC	6 V 10 V	8-PowerTDFN	8-VSONP (5x6)	15.1 mOhm	20 V	Surface Mount	3.2 W 63 W	N-Channel
Texas Instruments CSD19534Q5AT	-55 °C	150 °C	100 V	3.4 V	44 A	1680 pF	MOSFET (Metal Oxide)	22 nC	6 V 10 V	8-PowerTDFN	8-VSONP (5x6)	15.1 mOhm	20 V	Surface Mount	3.2 W 63 W	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 100 V, 12.6 mΩ, SON 5 mm × 6mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources