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Discrete Semiconductor Products

CSD19534Q5AT

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Texas Instruments

100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 15.1 MOHM

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VSONP (DQJ)
Discrete Semiconductor Products

CSD19534Q5AT

Active
Texas Instruments

100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 15.1 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD19534Q5AT
Current - Continuous Drain (Id) @ 25°C44 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22 nC
Input Capacitance (Ciss) (Max) @ Vds1680 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)63 W, 3.2 W
Rds On (Max) @ Id, Vgs15.1 mOhm
Supplier Device Package8-VSONP (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.58
10$ 1.31
100$ 1.04
Digi-Reel® 1$ 1.58
10$ 1.31
100$ 1.04
Tape & Reel (TR) 250$ 1.02
500$ 0.88
1250$ 0.75
2500$ 0.71
6250$ 0.69
12500$ 0.66
NewarkEach (Supplied on Cut Tape) 1$ 3.10
10$ 3.00
25$ 2.90
50$ 2.82
100$ 2.74
250$ 2.68
500$ 2.64
1000$ 2.62
Texas InstrumentsSMALL T&R 1$ 1.31
100$ 1.01
250$ 0.74
1000$ 0.53

Description

General part information

CSD19534Q5A Series

This 100 V, 12.6 mΩ, SON 5 mm × 6mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

This 100 V, 12.6 mΩ, SON 5 mm × 6mm NexFET power MOSFET is designed to minimize losses in power conversion applications.