Integrated Circuits (ICs)

TC427VPAG

Obsolete

Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

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Search across all available documentation for this part.

Integrated Circuits (ICs)

TC427VPAG

Obsolete

Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TC427VPAG

Channel Type	Independent
Current - Peak Output (Source, Sink)	1.5 A, 1.5 A
Driven Configuration	Low-Side
Gate Type	N-Channel, P-Channel MOSFET
Input Type	Non-Inverting
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	30 ns
Rise / Fall Time (Typ) [custom]	30 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	18 V
Voltage - Supply [Min]	4.5 V

TC427 Series

Dual 1.5 A MOSFET Gate Driver

Part	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Channel Type	Package / Case	Package / Case [y]	Package / Case [x]	Current - Peak Output (Source, Sink)	Number of Drivers	Mounting Type	Driven Configuration	Input Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case
Microchip Technology TC427EOA	30 ns	30 ns	8-SOIC	Independent	8-SOIC	3.9 mm	0.154 in	1.5 A 1.5 A	2	Surface Mount	Low-Side	Non-Inverting	85 °C	-40 °C	N-Channel P-Channel MOSFET	18 V	4.5 V
Microchip Technology TC427EOA713	30 ns	30 ns	8-SOIC	Independent	8-SOIC	3.9 mm	0.154 in	1.5 A 1.5 A	2	Surface Mount	Low-Side	Non-Inverting	85 °C	-40 °C	N-Channel P-Channel MOSFET	18 V	4.5 V
Microchip Technology TC427VPAG	30 ns	30 ns	8-PDIP	Independent	8-DIP			1.5 A 1.5 A	2	Through Hole	Low-Side	Non-Inverting	125 °C	-40 °C	N-Channel P-Channel MOSFET	18 V	4.5 V	0.3 in	7.62 mm
Microchip Technology TC427CPA	30 ns	30 ns	8-PDIP	Independent	8-DIP			1.5 A 1.5 A	2	Through Hole	Low-Side	Non-Inverting	70 °C	0 °C	N-Channel P-Channel MOSFET	18 V	4.5 V	0.3 in	7.62 mm
Microchip Technology TC427COA	30 ns	30 ns	8-SOIC	Independent	8-SOIC	3.9 mm	0.154 in	1.5 A 1.5 A	2	Surface Mount	Low-Side	Non-Inverting	70 °C	0 °C	N-Channel P-Channel MOSFET	18 V	4.5 V
Microchip Technology TC427COA713	30 ns	30 ns	8-SOIC	Independent	8-SOIC	3.9 mm	0.154 in	1.5 A 1.5 A	2	Surface Mount	Low-Side	Non-Inverting	70 °C	0 °C	N-Channel P-Channel MOSFET	18 V	4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

TC427 Series

The TC426/TC427/TC428 are dual CMOS high-speed gate drivers. A TTL/CMOS input voltage level is translated into a rail-to-rail output voltage level swing. The CMOS output is within 25 mV of ground or positive supply. The low impedance, high-current gate driver outputs swing a 1,000 pF load 18 V in 30 ns. The unique current and voltage drive qualities make the TC426/TC427/TC428 ideal power MOSFET gate drivers, line drivers, and DC-to-DC converter building blocks. Input logic signals may equal the power supply voltage. Low input current 1 µA, making direct interface to CMOS/bipolar switch-mode power supply control ICs possible, as well as open-collector analog comparators. Quiescent power supply current is 8 mA maximum. The TC426 requires 1/5 the current of the pin-compatible bipolar DS0026 device. This is important in DC-to-DC converter applications with power efficiency constraints and high-frequency switch-mode power supply applications. Quiescent current is typically 6 mA when driving a 1,000 pF load 18 V at 100 kHz.

TC426: Inverting

TC427: Non-inverting

Documents

Technical documentation and resources

No documents available