Discrete Semiconductor Products

SISS42DN-T1-GE3

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MOSFET N-CH 100V 11.8/40.5A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 100V 11.8/40.5A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS42DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	11.8 A, 40.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	4.8 W, 57 W
Rds On (Max) @ Id, Vgs	14.4 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)
Vishay General Semiconductor - Diodes Division SISS42DN-T1-GE3	1850 pF	N-Channel	38 nC	10 V	7.5 V	Surface Mount	100 V	3.4 V	PowerPAK® 1212-8S	11.8 A 40.5 A	MOSFET (Metal Oxide)	-55 °C	150 °C	4.8 W 57 W	14.4 mOhm	PowerPAK® 1212-8S	20 V

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General part information

N-Channel 100 V 11.8A (Ta), 40.5A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources